2SA950 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SA950
-0.8A , -35V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 1W output applications
 Complementary to 2SC2120
CLASSIFICATION OF h_{FE (1)}
Product-Rank 2SA950-O 2SA950-Y
Range
100-200
160-320
G
H
J
A
D
B
K
E
CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
Collector


Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
-35
-30
-5
-0.8
600
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V_(BR)CBO
-35
-
-
V I_C= -0.1mA, I_E=0
Collector to Emitter Breakdown Voltage V_(BR)CEO
-30
-
-
V I_C= -10mA, I_B=0
Emitter to Base Breakdown Voltage
V_(BR)EBO
-5
-
-
V I_E= -0.1mA, I_C=0
Collector Cut-Off Current
I_CBO
-
-
-0.1
μA V_CB= -35V, I_E=0
Emitter Cut-Off Current
I_EBO
-
-
-0.1
μA V_EB= -5V, I_C=0
DC Current Gain
h_{FE (1)}
100
-
320
h_{FE (2)}
35
-
-
V_CE= -1V, I_C= -100mA
V_CE= -1V, I_C= -700mA
Collector to Emitter Saturation Voltage
V_CE(sat)
-
-
-0.7
V I_C= -500mA, I_B= -20mA
Emitter to Base Voltage
V_BE
-0.5
-
-0.8
V V_CE= -1V, I_C= -10mA
Transition Frequency
f_T
-
120
-
MHz V_CE= -5V, I_C= -10mA
Collector Output Capacitance
C_ob
-
19
-
pF V_CB= -10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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