2SA94 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – -0.2A , -400V PNP Silicon Medium Power Transistor

Elektronische Bauelemente
2SA94
-0.2A , -400V
PNP Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage Driver Applications
MARKING
ZTA94
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13’ inch
1
Base
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
Collector
2
4
F
REF.
A
B
C
D
3
E
Emitter
F
D
GH
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
J
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current- Pulsed
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
ICM
PD
RθJA
TJ, TSTG
-400
-400
-5
-0.2
-0.3
1
125
150, -55~150
Unit
V
V
V
A
A
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Min.
-400
-400
-5
-
-
-
80
Max.
-
-
-
-100
-5
-100
300
Unit
V
V
V
nA
µA
nA
DC current gain¹
70
-
h_FE
60
-
80
-
Collector-emitter saturation voltage
-
VCE(sat)
-
-0.2
V
-0.3
Base-emitter voltage
Transition frequency
VBE(on)
-
fT
50
-0.75
-
V
MHz
Test Conditions
IC= -0.1mA , IE=0
IC= -1mA, IB=0
IE= -0.1mA, IC=0
VCB= -400V, IE=0
VCE= -400V, IB=0
VEB= -4V, IC=0
VCE= -10V, IC= -10mA
VCE= -10V, IC= -1mA
VCE= -10V, IC= -100mA
VCE= -10V, IC= -50mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
VCE= -20V, IC= -10mA, f=100MHz
http://www.SeCoSGmbH.com/
15-Dec-2014 Rev. A
Any changes of specification will not be informed individually.
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