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| 2SA844_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor | |||
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Elektronische Bauelemente
2SA844
-0.1A , -55V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ High DC Current Gain
ï¬ Low Frequency Amplifier
CLASSIFICATION OF hFE
Product-Rank 2SA844-C 2SA844-D
Range
160~320 250~500
2SA844-E
400~800
G
H
J
A
D
B
K
E
CF
TO-92
ïªEmitter
ï«Collector
ï¬Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
4.40
4.30
Max.
4.70
4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ï¬ï
Base
Collector
ï«ï
ïªï
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
-55
-55
-5
-100
300
416
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-55
-
-
V IC= -0.01mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-55
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V IE= -0.01mA, IC=0
Collector Cut-Off Current
ICBO
-
-
-0.1
μA VCB= -18V, IE=0
Emitter Cut-Off Current
IEBO
-
-
-0.05 μA VEB= -2V, IC=0
DC Current Gain
hFE
160
-
800
VCE= -12V, IC= -2mA
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
-0.5
V IC= -10mA, IB= -1mA
Base to Emitter Voltage
VBE
-
-
-0.75
V VCE= -12V, IC= -2mA
Transition Frequency
fT
-
200
-
MHz VCE= -12V, IC= -2mA
Collector Output Capacitance
Cob
-
2
-
pF VCE= -10V, IC=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1
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