2SA821 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

Elektronische Bauelemente
2SA821
-0.03A , -210 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Breakdown Voltage
 Low Transition Frequency
CLASSIFICATION OF h_FE
Product-Rank 2SA821-N 2SA821-P
Range
56~120
82~180
2SA821-Q
82~180
G
H
J
A
D
B
K
E
CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
Collector


Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
-210
-210
-5
-30
250
500
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V_(BR)CBO
-210
-
-
V I_C= -0.05mA, I_E=0
Collector to Emitter Breakdown Voltage V_(BR)CEO -210
-
-
V I_C= -0.1mA, I_B=0
Emitter to Base Breakdown Voltage
V_(BR)EBO
-5
-
-
V I_E= -0.05mA, I_C=0
Collector Cut-Off Current
I_CBO
-
-
-1
μA V_CB= -150V, I_E=0
Emitter Cut-Off Current
I_EBO
-
-
-1
μA V_EB= -4.5V, I_C=0
DC Current Gain
h_FE
56
-
270
V_CE= -3V, I_C= -5mA
Collector to Emitter Saturation Voltage
V_CE(sat)
-
-
-0.6
V I_C= -2mA, I_B= -0.2mA
Transition Frequency
f_T
-
50
-
MHz V_CE= -5V, I_C= -2mA
Collector Output Capacitance
C_ob
-
8
-
pF V_CB= -10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 1