2SA812K Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Epitaxial Planar Transistor

Elektronische Bauelemente
2SA812K
-50 V, -100 mA
PNP Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z Complementary to 2SC1623K
z High DC Current Gain: h_FE = 200 TYP. (V_CE = -6V, I_C = -1mA)
z High Voltage: V_CEO = -50V
PACKAGE DIMENSIONS
3 ^Collector
1
Base
2
Emitter
ABSOLUTE MAXIMUM
RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
A
L
3
K
Top View
BS
1
2
V
G
D
J
C
H
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
Ratings
-60
-50
-5
-100
200
+150, -55 ~ +150
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
I_CBO
I_EBO
*V_CE(sat)
V_BE
h_FE
f_T
C_ob
Min.
-60
-50
-5
-
-
-
-0.58
90
-
-
Typ.
-
-
-
-
-
-
-
-
180
4.5
Max.
-
-
-
-100
-100
300
-0.68
600
-
-
CLASSIFICATION OF h_FE
Rank
P
Range
90 - 180
Marking
M4
Y
135 - 270
M5
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Test Conditions
I_C=-100uA
I_C=-1mA
I_E=-100uA
V_CB=-60V
V_EB=-5V
I_C=100mA, I_B=10mA
I_C = -1mA, V_CE = -6V
V_CE=-6V, I_C=-1mA
V_CE=-6V, I_C=-10mA
V_CB = -10V, f = 1 MHz
G
200 - 400
M6
B
300 - 600
M7
01-June-2002 Rev. A
Page 1 of 2