2SA733_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA733
-60 V, -150mA
PNP Plastic Encapsulated Transistor
FEATURES
Complementary of the 2SC945
Collector to base voltage: -60V
MARKING
Product
2SA733
Marking Code
CS
CLASSIFICATION OF h_FE
Product-Rank 2SA733-L
Range
120~220
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
3
Top View
CB
1
2
K
E
3
1
2
2SA733-H
200~475
LeaderSize
7’ inch
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-60
-50
-5
-150
200
150, -55 ~ 150
1
Base
2
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. D
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
fT
Cob
NF
-60
-50
-5
-
-
120
-
-0.58
50
-
-
-
-
-
-
-
-
-0.18
-0.62
-
4.5
6
-
-
-
-0.1
-0.1
475
-0.3
-0.68
-
7
20
V IC= -5µA, IE=0
V IC= -1mA, IB=0
V IE= -50µA, IC=0
µA VCB= -60V, IE=0
µA VEB= -5V, IC=0
VCE= -6V, IC= -1mA
V IC= -100mA, IB= -10mA
V VCE= -6V, IC= -1.0mA
MHz VCE= -6V, IC= -10mA
pF VCB= -10V, IE=0, f=1MHz
dB ^{VCE= -6V, IC= -0.3mA, f=100Hz,}
RG=10KΩ
Any changes of specification will not be informed individually.
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