2SA733T Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA733T
-60 V, -150 mA
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power dissipation
PACKAGE INFORMATION
Weight: 0.2100g (Approximately)
3
Base
Collector
2
1
Emitter
TO-92
G
H
J
A
D
1Emitter
2Collector
3Base
B
REF.
Millimeter
K
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70
-
D 3.30 3.81
E
CF
E 0.36 0.56
F 0.36 0.51
G
1.27 TYP.
H 1.10
-
J 2.42 2.66
K 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (T_A = 25℃ unless otherwise noted)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
-60
-50
-5
-100
250
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25℃ unless otherwise specified)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
V_BE
h_FE
f_T
C_ob
NF (noise figures)
Min.
-60
-50
-5
-
-
-
-0.58
90
100
-
-
Typ.
-
-
-
-
-
-0.18
-0.62
200
-
-
-
Max.
-
-
-
-100
-100
-0.30
-0.68
600
-
6
20
Unit
V
V
V
nA
nA
V
V
MHz
pF
dB
Test Conditions
I_C=-50uA, I_E = 0
I_C=-1mA, I_B = 0
I_E=-50uA, I_C = 0
V_CB=-60V, I_E = 0
V_EB=-5V, I_C = 0
I_C=-100mA, I_B=-10mA
V_CE = -6V, I_C = -1.0mA
V_CE=-6V, I_C=-1mA
V_CE=-6V, I_C=-10mA
V_CB = -10V, I_E = 0, f = 1 MHz
V_CE=-6V, I_C=-0.3mA, Rg=10kΩ, f=100HZ
CLASSIFICATION OF h_FE
Rank
R
Range
90 - 180
Q
135 - 270
P
200 - 400
K
300 - 600
01-June-2005 Rev. B
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