2SA733 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON TRANSISTOR

Elektronische Bauelemente
2SA733
-60 V, -150 mA
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z Complementary to 2SC945
z Collector-Base Voltage: VCBO=-60V
PACKAGE DIMENSIONS
V
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction, Storage Temperature
1
Base
3 ^Collector
2
Emitter
A
L
3
K
Top View
BS
1
2
G
D
J
C
H
Symbol
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
Ratings
-60
-50
-5
-150
200
+150, -55 ~ +150
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified)
Symbol
Min.
Typ.
BVCBO
-60
-
BVCEO
-50
-
BVEBO
-5
-
I_CBO
I_EBO
V_CE(sat)
V_BE(on)
h_FE
f_T
C_ob
NF (noise figures)
-
-
-
-0.58
120
50
-
-
-
-
-0.18
-0.62
-
-
4.5
6
Max.
-
-
-
-100
-100
-0.30
-0.68
475
-
7
20
CLASSIFICATION OF h_FE
Rank
L
H
Range
120 - 220
220 – 475
Marking
CS
01-June-2003 Rev. B
Unit
V
V
V
nA
nA
V
V
MHz
pF
dB
Test Conditions
I_C=-5uA, I_E = 0
I_C=-1mA, I_B = 0
I_E=-50uA, I_C = 0
V_CB=-60V, I_E = 0
V_EB=-5V, I_C = 0
I_C=-100mA, I_B=-10mA
V_CE = -6V, I_C = -1.0mA
V_CE=-6V, I_C=-1mA
V_CE=-6V, I_C=-10mA
V_CB = -10V, I_E = 0, f = 1 MHz
V_CE=-6V, I_C=-0.3mA, Rg=10kΩ, f=100HZ
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