2SA727 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SA727
-3A, -40V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High current output up to -3A
Low saturation voltage
TSOP-6
A
E
L
654
MARKING
B
727
= Date Code
123
F
C
H
DG
K
J
PACKAGE INFORMATION
Package
TSOP-6
MPQ
3K
Leader Size
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.10 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation @ T_C=25°C ³
Thermal Resistance Junction-ambient Max ¹
Junction & Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJC
TJ, TSTG
Ratings
-40
-30
-5
-3
1.2
105
150, -55 ~ 150
Unit
V
V
V
A
W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min.
Typ. Max. Unit
Test Conditions
Collector-base breakdown voltage
V(BR)CBO
-40
-
-
V IC= -100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO
-30
-
-
V IC= -1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO
-5
-
-
V IE= -10µA, IC=0
Collector cut-off current
ICBO
-
-
-0.1
µA VCB= -30V, IE=0
Emitter cut-off current
IEBO
-
-
-0.1
µA VEB= -5V, IC=0
-
-0.15 -0.25
IC= -0.5A, IB= -5mA
Collector-emitter saturation voltage ²
VCE(sat)
-
-0.85
-1
V I_C= -2A, I_B= -20mA
-
-0.25
-0.5
IC= -2A, IB= -200mA
Base-emitter saturation voltage ²
VBE(sat)
-
-
-0.8
-1.1
-1
-1.5
V
IC= -0.5A, IB= -5mA
IC= -2A, IB= -200mA
DC current gain²
30
hFE
160
-
-
-
320
VCE= -2V, IC= -20mA
VCE= -2V, IC= -1A
Transition frequency
fT
-
80
-
MHz
VCE= -5V, IC= -100mA,
f=100MHz
Collector output capacitance
Cob
-
55
-
pF VCB= -10V, f=1MHz
NOTE:
1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. , 167℃/W when mounted on Min. copper pad.
2. The data tested by pulsed , pulse width≦300us , duty cycle ≦2%
3. The power dissipation is limited by 150 ℃junction temperature
http://www.SeCoSGmbH.com/
23-May-2013 Rev. A
Any changes of specification will not be informed individually.
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