2SA719 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification and driver amplification)

Elektronische Bauelemente
2SA719
-0.5 A, -30 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 For low-frequency power amplification
and driver amplification.
G
H
CLASSIFICATION OF h_FE
Product-Rank 2SA719-Q 2SA719-R
Range
85~170 120~240
2SA719-S
170~340
J
A
D
B
K
E
CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
-30
-25
-5
-0.5
625
150, -55~150
Collector


Emitter
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
V_(BR)CBO
-30
-
-
V
Collector to Emitter Breakdown Voltage V_(BR)CEO
-25
-
-
V
Emitter to Base Breakdown Voltage
V_(BR)EBO
-5
-
-
V
Collector Cut-Off Current
I_CBO
-
-
-0.1
μA
Emitter Cut-Off Current
I_EBO
-
-
-0.1
μA
DC Current Gain
h_FE(1)
85
-
340
h_FE(2)
40
-
-
Collector to Emitter Saturation Voltage
V_CE(sat)
-
-
-0.6
V
Base to Emitter Saturation Voltage
V_BE(sat)
-
-
-1.5
V
Transition Frequency
f_T
-
200
-
MHz
Collector Output Capacitance
C_ob
-
-
15
pF
Test condition
I_C= -10μA, I_E=0
I_C= -10mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -20V, I_E=0
V_EB= -4V, I_C=0
V_CE= -10V, I_C= -0.15A
V_CE= -10V, I_C= -0.5A
I_C= -0.3A, I_B= -30mA
I_C= -0.3A, I_B= -30mA
V_CE= -10V, I_C= -50mA, f=200MHz
V_CB= -10V, I_E= 0, f=1MHz
http://www.SeCoSGmbH.com/
26-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3