2SA684_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA684
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
 Automatic insertion by radial taping possible.
 Complementary pair with 2SC1384L.
CLASSIFICATION OF h_FE
Product-Rank 2SA684-Q
Range
85~170
2SA684-R
120~240
2SA684-S
170~340
TO-92L
G
H
J
Emitter
Collector
Base
A
D
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
Collector

ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_JA
R_JC
T_J, T_STG
Ratings
-60
-50
-5
-1
0.75
166
125
150, -55~150

Base

Emitter
Unit
V
V
V
A
W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
h_{FE (1)}
h_{FE (2)}
V_CE(sat)
V_BE(sat)
f_T
C_Ob
Min.
-60
-50
-5
-
85
50
-
-
-
-
Typ.
-
-
-
-
-
-0.2
-0.85
200
20
Max.
-
-
-
-0.1
340
-
-0.4
-1.2
-
30
Unit
V
V
V
μA
V
V
MHz
pF
Test Conditions
I_C= -10μA, I_E=0
I_C= -2mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -20V, I_E=0
V_CE= -10V, I_C= -500mA
V_CE= -5V, I_C= -1A
I_C = -500mA, I_B = -50mA
I_C = -500mA, I_B = -50mA
V_CE= -10V, I_E=50mA ,
f=200MHz
V_CB= -10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
01-Jul-2014 Rev.C
Any changes of specification will not be informed individually.
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