2SA684_11 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA684
-1A , -60V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
Automatic insertion by radial taping possible.
Complementary pair with 2SC1384L.
CLASSIFICATION OF h_FE
Product-Rank 2SA684-Q
Range
85~170
2SA684-R
120~240
2SA684-S
170~340
TO-92L
G
H
J
1Emitter
2Collector
3Base
A
D
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-60
-50
-5
-1
1
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
COb
-60
-
-
V
-50
-
-
V
-5
-
-
V
-
-
-0.1
µA
85
340
50
-
-
-
-0.2
-0.4
V
-
-0.85
-1.2
V
-
200
-
MHz
-
20
30
pF
Test Conditions
IC= -10µA, IE=0
IC= -2mA, IB=0
IE= -10µA, IC=0
VCB= -20V, IE=0
VCE= -10V, IC= -500mA
VCE= -5V, IC= -1A
IC = -500mA, IB = -50mA
IC = -500mA, IB = -50mA
VCE= -10V, IE=50mA , f=200MHz
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3