2SA684 Datasheet, PDF (1/3 Pages) Unisonic Technologies – PNP EPITAXIAL PLANAR TRANSISTOR

Elektronische Bauelemente
2SA684
PNP Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92L
∙ Automatic insertion by radial taping possible.
∙ Complementary pair with 2SC1384.
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
2
1. EMITTER
3
2. COLLECTOR
3 . BASE
1 23
1
Symbol
Parameter
Value
Units
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
-60
V
-50
V
-5
V
-1
A
1
W
-55-150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V_(BR)CBO Ic=-10uA, I_E=0
-60
V
Collector-emitter breakdown voltage
V_(BR)CEO Ic=-2mA, I_B=0
-50
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10µA, I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=-20V, I_E=0
-0.1 µA
DC current gain
h_FE(1)
h_FE(2)
V_CE=-10V, I_C=-500mA
V_CE=-5V, I_C=-1A
85
340
50
Collector-emitter saturation voltage
V_CE(sat) I_C=-500mA, I_B=-50mA
-0.2 -0.4
V
Base-emitter saturation voltage
V_BE(sat) I_C=-500mA, I_B=-50mA
-0.85 -1.2
V
Transition frequency
f_T
V_CE=-10V, I_E=50mA, f=200MHz
200
MHz
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
20
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Q
85-170
R
120-240
S
170-340
Any changing of specification will not be informed individual
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