2SA673_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
2SA673, 2SA673A
PNP
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low frequency amplifier
Complementary pair with 2SC1213 and 2SC1213A
CLASSIFICATION OF h_FE(1)
Product-Rank 2SA673-B
2SA673-C
Product-Rank 2SA673A-B 2SA673A-C
Range
60~120
100~200
2SA673-D
2SA673A-D
160~320
TO-92
G
H
J
A
D
1Emitter
2Collector
3Base
B
REF.
Millimeter
Min. Max.
A 4.40 4.70
K
B 4.30 4.70
C 12.70
-
D 3.30 3.81
E 0.36 0.56
E
CF
F 0.36 0.51
G
1.27 TYP.
H 1.10
-
J 2.42 2.66
K 0.36 0.76
Collector
2
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
2SA673
2SA673A
2SA673
Collector to Emitter Voltage
2SA673A
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-35
-50
-35
-50
-4
-500
400
150, -55~150
3
Base
1
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector to Base Breakdown 2SA673
-35
-
-
Voltage
V(BR)CBO
V
2SA673A
-50
-
-
Collector to Emitter
2SA673
-35
-
-
Breakdown Voltage
2SA673A
V(BR)CEO
-50
-
-
V
Emitter to Base Breakdown Voltage
V(BR)EBO
-4
-
-
V
Collector Cut - Off Current
ICBO
-
-
-0.5
µA
DC Current Gain
hFE (1)
60
hFE (2) *
10
-
320
-
-
Collector to Emitter Saturation Voltage
VCE(sat) *
-
-
-0.6
V
Collector to Emitter Voltage
VBE
* Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.
-
-0.64
-
V
Test Conditions
IC= -10µA, IE=0
IC= -1mA, IB=0
IE= -10µA, IC=0
VCB= -20V, IE=0
VCE= -3V, IC=- 10mA
VCE= -3V, IC= -500mA
IC = -150mA, IB= -15mA
VCE= -3V, IC= -10mA
http://www.SeCoSGmbH.com/
21-Jan-2011 Rev. C
Any changes of specification will not be informed individually.
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