2SA673 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Elektronische Bauelemente
2SA673/673A
PNP Silicon
Plastic-Encapsulate Transistor
FEATURES
* Low Frequency Amplifier
* Complementary Pair with 2SC1213
and 2SC1213A
* RoHS Compliant Product
* A suffix of "-C" specifies halogen-free
4.55±0.2
TO-92
3.5±0.2
(1.27 Typ.)
1.25±0.2
12 3
2.54±0.1
1: Emitter
2: Base
3: Collector
0.46±0.1
0.43+–00..0078
MAXIMUM RATINGS (T_A=25^oC unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
2SA673
-35
2SA673A
-50
V_CEO
Collector-Emitter Voltage
2SA673
-35
2SA673A
-50
V_EBO
Emitter-Base Voltage
-4
I_C
Collector Current -Continuous
-500
P_C
Collector Power dissipation
400
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO ^{IC=-10µA,IE=0}
2SA67 3 -35
2SA673A _-50
Collector-emitter breakdown voltage
V_(BR)CEO ^IC=-1mA,IB=0
2SA673
-35
2SA673A _-50
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10µA,I_C=0
-4
Collector cut-off current
I_CBO
V_CB= -20 V, I_E=0
DC current gain
*h_FE(1)
V_CE=-3V, I_C= -10mA
60
h_FE(2)
V_CE=-3V, I_C=-500mA
10
Collector-emitter saturation voltage *V_CEsat
I_C= -150mA, I_B=-15mA
Base-emitter voltage
V_BE
V_CE=-3V, I_C=-10mA
* Pulse test.
CLASSIFICATION OF h_FE(1)
Rank
B
C
TYP
-0.64
D
Units
V
V
V
mA
mW
o_C
o_C
MAX UNIT
V
V
V
-0.5 µA
320
-0.6
V
V
Range
60-120
100- 200
160-320
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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