2SA608N Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

Elektronische Bauelemente
2SA608N
-0.1 A, -40 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Large current capacity and wide ASO.
APPLICATIONS
 Capable of being used in the low frequency to
high frequency range.
CLASSIFICATION OF h_FE
Product-Rank 2SA608N-F 2SA608N-G
Range
160~320 280~560
G
H
J
A
D
B
K
E
CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
Collector


Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
-60
-50
-6
-0.15
500
250
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
V_(BR)CBO
-60
-
-
V
Collector to Emitter Breakdown Voltage V_(BR)CEO
-50
-
-
V
Emitter to Base Breakdown Voltage
V_(BR)EBO
-6
-
-
V
Collector Cut-Off Current
I_CBO
-
-
-0.1
μA
Emitter Cut-Off Current
I_EBO
-
-
-0.1
μA
DC Current Gain
h_FE(1)
160
-
560
h_FE(2)
70
-
-
Collector to Emitter Saturation Voltage
V_CE(sat)
-
-
-0.3
V
V_BE(sat)
-
-
-1
V
Transition Frequency
f_T
-
200
-
MHz
Collector Output Capacitance
C_ob
-
4.5
-
pF
Test condition
I_C= -0.01mA, I_E=0
I_C= -1mA, I_B=0
I_E= -0.01mA, I_C=0
V_CB= -40V, I_E=0
V_EB= -5V, I_C=0
V_CE= -6V, I_C= -1mA
V_CE= -6V, I_C= -0.1mA
I_C= -100mA, I_B= -10mA
I_C= -100mA, I_B= -10mA
V_CE= -6V, I_C= -10mA
V_CB= -6V, I_C= 0, f=1MHz
http://www.SeCoSGmbH.com/
26-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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