2SA562_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA562
-0.5A, -35V
PNP Plastic Encapsulated Transistor
FEATURES
 Excellent h_FE Linearity
CLASSIFICATION OF h_FE
Product-Rank 2SA562-O
Range
70~140
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
2SA562-Y
120~240
TO-92
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
 Emitter
 Collector
 Base
Collector

Base
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
-35
-30
-5
-500
500
150, -55~150

Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Min.
-35
-30
-5
-
-
70
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
200
13
Max.
-
-
-
-0.1
-0.1
240
-0.25
-1
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
I_C= -100μA, I_E = 0A
I_C= -1mA, I_B = 0A
I_E= -100μA, I_C = 0A
V_CB= -35 V, I_E = 0 A
V_EB= -5 V, I_C = 0 mA
V_CE= -1V, I_C= -100mA
I_C= -100mA, I_B= -10mA
V_CE= -1V , I_C= -100mA
V_CE = -6V, I_C = -20mA
V_CB = -6V, I_E= 0A, f= 1MHz
http://www.SeCoSGmbH.com/
30-May-2012 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 2