2SA2018F_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SA2018F
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
FEATURES
High Collector Current
Low VCE(sat) - VCE(sat)Ä°-250mV at IC = -200mA/IB=-10mA
MARKING CODE
BW
A
L
3
S
Top View
B
2
1
3. Collector
2. Base
1. Emitter
G
H
D
C
J
K
SOT-523
Dim Min Max
A
1.50 1.70
B
0.78 _0.82
C
0.80 0.82
D
0.28 0.32
G 0.90 1.10
H
0.00 0.10
J
0.10 0.20
K
0.35 0.41
L
0.49 0.51
S
1.50 1.70
All Dimension in mm
Maximum Ratings (Ta=25 ^o C unless otherwise specified)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Continuous)
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
-15
V
VCEO
-12
V
VEBO
-6
V
IC
-0.5
A
PC
0.15
W
Tj
-55~+150
o_C
Tstg
-55~+150
o_C
Electrical Characteristics (Tamb=25 ^o C unless otherwise specified)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO -15
Collector-emitter breakdown voltage BVCEO -12
Emitter-base breakdown voltage
BVEBO
-6
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current gain
hFE
270
Collector-emitter saturation voltage VCE(sat)
Transition frequency
fT
Collector Output capacitance
Cob
Typ.
260
6.5
Max.
-0.1
-0.1
680
-0.25
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=-10 μ A, IE=0
IC=-1mA, IB=0
IE=-10 μ A, IC=0
VCB=-15V, IE=0
VEB=-6V, IC=0
VCE=-2V, IC=-10mA
IC=-200mA, IB=-10mA
VCE=-2V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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