2SA1980_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
2SA1980
-150 mA, -50 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low collector saturation voltage: V_CE(sat) =-0.3V(Max.)
Low output capacitance : C_ob=4pF (Typ.)
Complements of the 2SC5343
CLASSIFICATION OF h_FE
Product-Rank 2SA1980-O
Range
70~140
2SA1980-Y
120~240
2SA1980-G
200~400
2SA1980-L
300~700
TO-92
G
H
J
A
D
B
K
E
CF
1 Emitter
2 Collector
3 Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
2
3Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-50
-50
-5
-150
625
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
V(BR)CBO
-50
V(BR)CEO
-50
V(BR)EBO
-5
ICBO
-
ICEO
-
hFE
70
VCE(sat)
-
fT
80
Cob
-
NF
-
-
-
V IC=-100µA, IE=0
-
-
V IC=-10mA, IB=0
-
-
V IE=-10µA, IC=0
-
-0.1
µA VCB=-50 V, IE=0
-
-0.1
µA VEB=-5 V, IC=0
-
700
VCE=-6V, IC=-2mA
-
-0.30
V IC=-100mA, IB=-10mA
-
-
MHz VCE=-10V, IC =-1mA
4
7
pF VCB=-10V, IE=0, f=1MHz
-
10
dB ^{VCE=-6V, IC=-0.1mA, f=1KHz,}
RS=10KΩ
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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