2SA1832 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SA1832
-0.15A , -50V
PNP Silicon Plastic Encapsulated Transistor
FEATURES
 High Voltage and High Current
 Excellent h_FE Linearity
 Complementary to 2SC4738
CLASSIFICATION OF h_FE
Product-Rank 2SA1832-Y
Range
120~240
Marking
SY
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
2SA1832-GR
200~400
SG
A
M
3
Top View
CB
1
2
K
L
E
3
1
2
D
F
G
H
J
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.75 0.85
0.7
0.9
0.9
1.1
0.15 0.25
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.325
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
Ratings
-50
-50
-5
-150
100
125
-55~125
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut - off Current
Emitter Cut - off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Min.
-50
-50
-5
-
-
120
-
80
-
Typ.
-
-
-
-
-
-
-
-
4
Max.
-
-
-
-100
-100
400
-0.3
-
7
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
I_C= -100A, I_E=0
I_C= -1mA, I_B=0
I_E= -100A, I_C=0
V_CB= -50V, I_E=0
V_EB= -5V, I_C=0
V_CE= -6V, I_C= -2mA
I_C= -100mA, I_B= -10mA
V_CE= -10V, I_C= -1mA
V_CB= -10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
25-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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