2SA1797_09 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
2SA1797
PNP
General Purpose Transistor
FEATURES
High transition frequency
High power dissipation
PACKAGE DIMENSIONS
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
4
123
A
E
C
1
2
3
1. Base
2. Collector
3. Emitter
MARKING : AGX
X = hFE Rank Code
B
F
G
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40 4.60
3.94 4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction & Storage temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-50
-50
-6
-2
0.5
150, -55~150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Typical Transition frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
COB
Min.
-50
-50
-6
-
-
82
-
-
Typ.
200
36
Max.
-
-
-
-0.1
-0.1
270
-0.35
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC= -1mA, IB=0
IE=-50µA, IC=0
VCB=-50V, IE=0
VEB=-5 V, IC=0
VCE=-2V, IC= -500mA
IC=-1A, IB= -50mA
VCE=-2V, IC=-500mA, f = 100MHz
VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE2
Rank
Range
P
82 - 180
Q
120 - 270
http://www.SeCoSGmbH.com/
29-Oct-2009 Rev. C
Any changes of specification will not be informed individually.
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