2SA1797 Datasheet, PDF (1/2 Pages) Rohm – Power Transistor (-50V, -3A)

Elektronische Bauelemente
2SA1797
PNP
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High transition frequency
 High power dissipation
PACKAGE DIMENSIONS
A
C
D
SOT-89
I
H
G
MARKING : AGX
X = hFE Rank Code
1
2
3
1. Base
2. Collector
3. Emitter
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A
4.40 4.60
G
3.00 REF.
B
4.05 4.25
H
1.50 REF.
C
1.50 1.70
I
0.40 0.52
D
1.30 1.50
J
1.40 1.60
E
2.40 2.60
K
0.35 0.41
F
0.89 1.20
L
5° TYP.
L
M
0.70 REF.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction & Storage temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
-50
-50
-6
-2
0.5
150, -55~150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Unit
V
V
V
A
W
°C
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Typical Transition frequency
Output Capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_OB
Min.
-50
-50
-6
-
-
82
-
-
Typ.
200
36
Max.
-
-
-
-0.1
-0.1
270
-0.35
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I_C=-50μA, I_E=0
I_C= -1mA, I_B=0
I_E=-50μA, I_C=0
V_CB=-50V, I_E=0
V_EB=-5 V, I_C=0
V_CE=-2V, I_C= -500mA
I_C=-1A, I_B= -50mA
V_CE=-2V, I_C=-500mA, f = 100MHz
V_CB=-10V, I_E=0, f=1MHz
CLASSIFICATION OF hFE2
Rank
Range
P
82 - 180
Q
120 - 270
http://www.SeCoSGmbH.com/
01-June-2005 Rev. B
Any changes of specification will not be informed individually.
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