2SA1774_10 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SA1774
-0.15A, -60V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low C_OB. C_OB=4.0pF
Complements the 2SC4617
CLASSIFICATION OF h_FE
Product-Rank 2SA1774-Q
Range
120~270
Marking
FQ
2SA1774-R
180~390
FR
2SA1774-S
270~560
FS
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
LeaderSize
7’ inch
SOT-523
A
M
3
Top View
CB
1
2
K
L
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5
1.7
1.45 1.75
0.75 0.85
0.7
0.9
0.9
1.1
0.15 0.25
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25 0.325
Collector
3
1
Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-60
-50
-6
-150
150
150, -55 ~ 150
2
Emitter
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
DC current gain
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
-60
-50
-6
-
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
-
140
3.5
Max.
-
-
-
-0.1
-0.1
-0.5
-1.2
560
-
5.0
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1μA, IB=0
IE=-50μA, IC=0
VCB=-60V, IE=0
VEB= -6V, IC=0
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-3V, IC=-1mA
VCE=-12V, IE=-2mA, f=30MHz
VCB=-12V, IE=0, f=1MHz
* Pulse Test :Pulse Width ≤300us,D.C ≤ 2%
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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