2SA1774 Datasheet, PDF (1/2 Pages) ON Semiconductor – PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

Elektronische Bauelemente
FEATURES
· Low Cob.
Cob=4.0pF
· Compements the 2SC4617
STRUCTURE
· Expitaxial planar type
· PNP Silicon Teansistor
2SA1774
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A
L
3
S
Top View
B
2
1
D
G
C
J
H
K
3 ^Collector
Base 2
1
Emitter
SOT-523
Dim Min Max
A
1.50 1.70
B
0.78 0.82
C
0.80 0.82
D
0.28 0.32
G 0.90 1.10
H
0.00 0.10
J
0.10 0.20
K
0.35 0.41
L
0.49 0.51
S
1.50 1.70
All Dimension in mm
!Absolute maximum (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Limits
Unit
VCBO
-60
V
VCEO
-50
V
VEBO
-6
V
IC
-0.15
A
PC
0.15
W
Tj
150
°C
Tstg
−55~+150
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO -60
Collector-emitter breakdown voltage BVCEO -50
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
-7
ICBO
−
IEBO
−
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
hFE
VCE(sat)
fT
Cob
120
−
−
−
Typ.
−
−
−
−
−
−
−
140
4.0
Max.
−
−
−
-0.1
-0.1
560
-0.5
−
5.0
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC=-50µA
IC=-1uA
IE=-50µA
VCB=-60V
VEB=-6V
VCE=-6V, IC=-1mA
IC/IB=-50mA/-5mA
VCE=-12V, IE=−2mA, f=30MHz
VCE=-12V, IE=0A, f=1MHz
hFE values are classified as follows :
Item
Q
R
hFE
120~270 180~390
Marking
FQ
FR
S
270~560
FS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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