2SA1579 Datasheet, PDF (1/2 Pages) Rohm – High-voltage Amplifier Transistor (-120V, -50mA)

Elektronische Bauelemente
2SA1579
-0.05A , -120V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 High Breakdown Voltage. (BV_CEO = -120V)
 Complementary of the 2SC4102
CLASSIFICATION OF h_FE
Product-Rank
2SA1579-R
Range
180~390
Marking
RR
2SA1579-S
270~560
RS
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
Ratings
-120
-120
-5
-50
100
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut - off Current
Emitter Cut - off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
Min.
-120
-120
-5
-
-
180
-
Typ.
-
-
-
-
-
-
-
Max.
-
-
-
-0.5
-0.5
560
-0.5
Unit
V
V
V
A
A
V
Transition Frequency
f_T
-
140
-
MHz
Collector Output Capacitance
C_ob
-
3.2
-
pF
Test Conditions
I_C= -50A, I_E=0
I_C= -1mA, I_B=0
I_E= -50A, I_C=0
V_CB= -100V, I_E=0
V_EB= -4V, I_C=0
V_CE= -6V, I_C= -2mA
I_C= -10mA, I_B= -1mA
V_CE= -12V, I_C= -2mA,
f= 30MHz
V_CB= -12V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
26-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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