2SA1577_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SA1577
-0.5A, -40V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Complements of the 2SC4097
Large I_C, MAX=-500mA
Low V_CE(sat). Ideal for low-voltage operation.
CLASSIFICATION OF h_FE
Product-Rank 2SA1577-P
Range
82~180
Marking
HP
2SA1577-Q
120~270
HQ
2SA1577-R
180~390
HR
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector
3
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
PC
TJ, TSTG
Ratings
-40
-32
-5
-500
200
150, -55 ~ 150
1
Base
2
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
-40
-
-
V
V(BR)CEO
-32
-
-
V
V(BR)EBO
-5
-
-
V
ICBO
-
-
-1
µA
IEBO
-1
µA
hFE
82
-
390
VCE(sat)
-
-
-0.4
V
fT
-
200
-
MHz
Cob
-
7
-
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-10mA
IC=-100mA, IB=-10mA
VCE=-5V, IC=-20mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
07-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2