2SA1576A_11 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Epitaxial Paner Transistors

Elektronische Bauelemente
2SA1576A
-0.15A, -60V
PNP Silicon Epitaxial Paner Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SA1576A is designed for use in driver stage of
AF amplifier and general purpose amplificaion.
FEATURES
Complements of the 2SC4081
Excellent h_FE Linearity
SOT-323
A
L
3
Top View
CB
1
1
2
K
E
3
2
CLASSIFICATION OF h_FE
Product-Rank 2SA1576A-Q
Range
120~270
Marking
FQ
2SA1576A-R
180~390
FR
2SA1576A-S
270~560
FS
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
LeaderSize
7’ inch
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
Collector
3
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-60
-50
-6
-150
200
150, -55 ~ 150
1
Base
2
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
-60
-
-
V
V(BR)CEO
-50
-
-
V
V(BR)EBO
-6
-
-
V
ICBO
-
-
0.1
µA
IEBO
0.1
µA
hFE
120
-
560
VCE(sat)
-
-
-0.5
V
fT
-
140
-
MHz
Cob
-
4
5
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-60V, IE=0
VEB=-6V, IC=0
VCE=-6V, IC=-1mA
IC=-50mA, IB=-5mA
VCE=-12V, IC=-2mA, f=30MHz
VCB=-12V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
07-Jan-2011 Rev. C
Any changes of specification will not be informed individually.
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