2SA1576A Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Elektronische Bauelemente
RoHS Compliant Product
2SA1576A
PNP Silicon
Epitaxial Planar Transistor
Description
The 2SA1576A is designed for use
in driver stage of AF amplifier and
general purpose amplificaion.
Feature
*Complements the 2SC4081
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0
0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BSC.
Absol ute Maximum Ratings at Ta = 25^oC
Para mete r
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
Characteristics at Ta = 25^oC
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj, Tstg
Parameter
Symbol Min
Collector-Base Breakdown Voltage
BVCBO
-60
Collector-Emitter Breakdown Voltage
BVCEO
-50
Emitter-Base Breakdown Voltage
BVEBO
-6
Collector-Emitter Breakdown Voltage
ICBO
-
Emitter-Base Cutoff Current
IEBO
-
Collector Saturation Voltage
VCE(sat)
-
DC Current Gain
hFE
120
Gain-Bandwidth Product
fT
-
Output Capacitance
Classification of
Rank
hFE
Cob
-
5AQ
Range
120 - 270
Ratings
-60
-50
-6
-150
225
-55~+150
Typ. Max
-
-
-
-
-
-
- -100
- -100
- -500
-
560
140
-
4
5
Unit
V
V
V
nA
nA
mV
-
MHz
pF
5AR
180 - 390
Unit
V
V
V
mA
mW
o_C
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5 mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, f=1MHz, IE=0
5AS
270 - 560
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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