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2SA1298 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS)
Elektronische Bauelemente
2SA1298
-0.8A , -35V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Frequency Power Amplifier Application
 Power Switching Applications
CLASSIFICATION OF hFE (1)
Product-Rank 2SA1298-O
Range
100~200
Marking
IO
2SA1298-Y
160~320
IY
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
2.80
2.25
1.20
Max.
3.00
2.55
1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Collector

Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.

Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Ratings
-35
-30
-5
-800
200
625
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
VEmltitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
Base to Emitter Saturation Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Min.
-35
-30
-5
-
-
100
40
-0.5
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
120
13
Max.
-
-
-
-0.1
-0.1
320
-
-0.8
-0.5
-
-
Unit
V
V
V
A
A
V
V
MHz
pF
Test Conditions
IC= -1mA, IE=0
IC= -10mA, IB=0
IE= -1mA, IC=0
VCB= -30V, IE=0
VEB= -5V, IC=0
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC= -500mA, IB= -20mA
VCB= -1V, IC= -10mA
VCE= -5V, IC= -10mA
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
19-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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