2SA1296 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Elektronische Bauelemente
2SA1296
-2 A, -20 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Low Saturation Voltage：V_CE(sat)
 High DC Current Gain
G
H
CLASSIFICATION OF h_FE(1)
Product-Rank 2SA1296-Y 2SA1296-GR
Range
120~240
200~400
J
A
D
B
K
E
CF
TO-92
Emitter
Collector
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76

Base
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
-20
-20
-6
-2
750
166
150, -55~150
Collector


Emitter
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Collector to Base Breakdown Voltage
V_(BR)CBO
-20
-
-
V
Collector to Emitter Breakdown Voltage V_(BR)CEO
-20
-
-
V
Emitter to Base Breakdown Voltage
V_(BR)EBO
-6
-
-
V
Collector Cut-Off Current
I_CBO
-
-
-0.1
μA
Emitter Cut-Off Current
DC Current Gain
I_EBO
-
-
-0.1
μA
h_FE(1)
120
-
400
h_FE(2)
40
-
-
Collector to Emitter Saturation Voltage
V_CE(sat)
-
Base to Emitter Voltage
V_BE
-
-
-0.5
V
-
-0.85
V
Transition Frequency
f_T
-
120
-
MHz
Collector Output Capacitance
C_ob
-
40
-
pF
Test condition
I_C= -0.1mA, I_E=0
I_C= -10mA, I_B=0
I_E= -0.1mA, I_C=0
V_CB= -20V, I_E=0
V_EB= -6V, I_C=0
V_CE= -2V, I_C= -0.1A
V_CE= -2V, I_C= -2A
I_C= -2A, I_B= -0.1A
V_CE= -2V, I_C= -0.1A
V_CE= -2V, I_C= -0.5A
V_CB= -10V, I_E=0, f=1MHz
http://www.SeCoSGmbH.com/
18-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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