2SA1213 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Elektronische Bauelemente
2SA1213
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
SOT-89
1.BASE

2.COLLECTOR 


3.EMITTER


*Features
Collector Current -2A
Low power dissipation 0.5W
D
D1
b1
b
e
e1
A
C
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
*Stucture
Epitaxial planar type.
PNP silicon transistor.
č ¥ Ď ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100ȰA đ IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA , IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100ȰAđ IC=0
-5
ḤḤV
Collector cut-off current
ICBO
VCB=-50 V , IE=0
-0.1 ḤȰA
Emitter cut-off current
IEBO
VEB=-5 V , IC=0
-0.1 ḤȰA
DC current gain
Collector-emitter saturation voltage
hFE 1
hFE 2
VCEsat
VCE=-2V, IC= -0.5A
VCE=-2V, IC= -2A
IC=-1A, IB= -0.05A
70 240
20
-0.5
V
Base-emitter saturation voltage
VBEsat
IC=-1A, IB= -0.05A
-1.2
V
Transition frequency
fT
VCE= -2V, IC=-0.5A
100
MHz
ͮ͟ͻ͸ ^{CLASSIFICATION OF hFE}
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Ḥhttp://www.SeCoSGmbH.com
NOaNY
01-Jun-2002 Rev. A
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Any changing of specification will not be informed individual
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