2SA1201 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
RoHS Compliant Product
2SA1201
PNP Silicon
Epitaxial Planar Transistor
SOT-89
FEATURES
z High voltage
z High transition frequency
z Complementary to 2SC2881
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-120
V
V_CEO
Collector-Emitter Voltage
-120
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-0.8
A
P_C
Collector Power Dissipation
0.5
W
T_J
Junction Temperature
T_stg
Storage Temperature
150
℃
-55-150
℃
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5q TYP.
0.70 REF.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-1mA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-10mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-1mA,I_C=0
Collector cut-off current
I_CBO
V_CB=-120V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
DC current gain
h_FE
V_CE=-5V,I_C=-100mA
Collector-emitter saturation voltage
V_CE(sat) I_C=-500mA,I_B=-50mA
Base-emitter voltage
V_BE
V_CE=-5V,I_C=-500mA
Transition frequency
f_T
V_CE=-5V,I_C=-100mA
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
MIN
-120
-120
-5
80
TYP
120
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
240
-1
V
-1
V
MHz
30
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
O
80-160
DO
Y
120-240
DY
http://www.SeCoSGmbH.com
08-May-2007 Rev. A
Any changing of specification will not be informed individual
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