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| 2SA1179 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP) | |||
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Elektronische Bauelemente
2SA1179
-0.15A , -55V
PNP Silicon Plastic Encapsulated Transistor
FEATURES
ï High breakdown voltage
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
MARKING
Product
2SA1179
Marking Code
M
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7â inch
SOT-23
A
L
3
Top View
CB
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
Collector
ï¬ï
ï ï ïªï
Base
ï«
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-55
-50
-5
-150
200
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Collector to Emitter
Saturation Voltage
VCE(sat)
Min.
-55
-50
-5
-
-
200
-
Typ.
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
400
-0.5
Base to Emitter Saturation Voltage
VBE(sat)
-
Transition Frequency
Collector Output Capacitance
fT
-
Cob
-
-
-1.0
180
-
4
-
Unit
V
V
V
ïA
ïAï
V
V
MHz
pF
Test Conditions
IC= -10ïA, IE=0
IC= -1mA, IB=0
IE= -10ïA, IC=0
VCB= -35V, IE=0
VEB= -4V, IC=0
VCE= -6V, IC= -1mA
IC= -50mA, IB= -5mA
IC= -50mA, IB= -5mA
VCE= -6V, IC= -10mA
VCB= -6V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
28-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
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