2SA1162_10 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SA1162
-0.15A, -50V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
 Low Noise: NF=1 dB(Typ.), 10 dB(Max.)
 Complements of the 2SC2712
MECHANICAL DATA
 Case: SOT-23, Molded Plastic
 Weight: 0.008 grams(approx.)
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
CLASSIFICATION OF h_FE
Product-Rank 2SA1162-O
Range
70~140
Marking
SO
2SA1162-Y
120~240
SY
2SA1162-GR
200~400
SG
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Device Dissipation
Junction & Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J, T_STG
Ratings
-50
-50
-5
-150
150
125, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Noise Figure
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
f_T
C_ob
NF
Min.
-50
-50
-5
-
-
-
70
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.3
400
-
7
10
Unit
V
V
V
μA
μA
V
MHz
pF
dB
Test Conditions
I_C=-100μA, I_E=0
I_C=-1mA, I_B=0
I_E=-100μA, I_C=0
V_CB=-50V, I_E=0
V_EB= -5V, I_C=0
I_C=-100mA, I_B=-10mA
V_CE=-6V, I_C=-2mA
V_CE=-10V, I_C=-1mA
V_CB=-10V, I_E=0, f=1MHz
V_CB=-6V, I_C=0.1mA, f=1MHz, Rg=10KΩ
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
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