2SA1162 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SA1162
PNP Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n _{RoHS Compliant Product}
n _{Low noise : NF= 1dB(Typ.),10dB (Max.)}
n _{Complementary to 2SC2712.}
n _{Small Package.}
V
3
1
2
A
L
3
Top View
1
2
G
Collector
3
1
Base
BS
2
Emitter
C
(MAXIMUM RATINGS* TA=25^OC )
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-50
V
V_CEO
Collector-Emitter Voltage
-50
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
150
mA
P_D
Total Device Dissipation
150
mW
T_J, T_stg
Junction and Storage Temperature
-55~125
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V_(BR)CBO Ic=-100u A,I_E=0
-50
V
Collector-emitter breakdown voltage
V_(BR)CEO Ic=-1mA,I_B=0
-50
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100 u A,I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=-50V,I_E=0
-0.1 u A
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
-0.1 u A
DC current gain
h_FE
V_CE=-6V,I_C=-2mA
70
400
Collector-emitter saturation voltage
V_CE(sat) I_C=-100mA,I_B=-10mA
-0.3
V
Transition frequency
f_T
V_CE=-10V,I_C=-1mA
80
MHz
Collector output capacitance
Noise figure
CLASSIFICATION OF h_FE
Rank
Range
Marking
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
C_ob
V_CB=-10V,I_E=0,f=1MHz
V_CE=-6V,I_c=0.1mA,
NF
f=1KHZ,Rg=10KΩ
7
pF
10
dB
O
70-140
SO
Y
120-240
SY
GR(G)
200-400
SG
Any changing of specification will not be informed individual
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