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| 2SA1048_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor | |||
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Elektronische Bauelemente
2SA1048
-0.15 A, -50 V
PNP Plastic Encapsulated Transistor
FEATURES
ï¬ Small Package
ï¬ High Voltage
ï¬ Excellent hFE Linearity
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
CLASSIFICATION OF hFE
Product-Rank 2SA1048-O
Range
70~140
2SA1048-Y
120~240
2SA1048-GR
200~400
TO-92S
REF.
A
B
C
D
E
F
G
H
J
K
L
Millimeter
Min. Max.
3.90 4.10
3.05 3.25
1.42 1.62
15.1 15.5
2.97 3.27
0.66 0.86
2.44 2.64
1.27 REF.
0.36 0.48
0.36 0.51
45°
Collector
ï«ï
ï¬ï
Base
ïªï
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
VCBO
-50
Collector to Emitter Voltage
VCEO
-50
Emitter to Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-0.15
Collector Power Dissipation
PC
200
Thermal Resistance From Junction to Ambient
RθJA
625
Junction, Storage Temperature
TJ, TSTG
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test condition
Collector to Base Breakdown Voltage
V(BR)CBO
-50
-
-
V IC= -0.1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
-50
-
-
V IC= -1mA, IB=0
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V(BR)EBO
-5
ICBO
-
IEBO
-
-
-
V IE= -0.1mA, IC=0
-
-0.1
μA VCB= -50V, IE=0
-
-0.1
μA VEB= -5V, IC=0
DC Current Gain
hFE
70
Collector to Emitter Saturation Voltage
VCE(sat)
-
Transition Frequency
fT
80
-
400
VCE= -6V, IC= -2mA
-
-0.3
V IC= -100mA, IB= -10mA
-
-
MHz VCE= -10V, IC= -1mA
Collector Output Capacitance
Cob
-
-
7
pF VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
22-Aug-2013 Rev. E
Any changes of specification will not be informed individually.
Page 1 of 3
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