2SA1037_10 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SA1037
-0.15A, -60V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Excellent h_FE linearity.
Complements of the 2SC2412
MECHANICAL DATA
Case: SOT-23, Molded Plastic
Weight: 0.008 grams(approx.)
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
CLASSIFICATION OF h_FE
Product-Rank 2SA1037-Q
Range
120~270
Marking
FQ
2SA1037-R
180~390
FR
2SA1037-S
270~560
FS
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-60
-50
-6
-150
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
V(BR)CBO
-60
Collector-emitter breakdown voltage
V(BR)CEO
-50
Emitter-base breakdown voltage
V(BR)EBO
-6
Collector cut-off current
ICBO
-
Emitter cut-off current
IEBO
-
Collector-emitter saturation voltage
VCE(sat)
-
DC current gain
hFE
120
Transition frequency
fT
-
Collector output capacitance
Cob
-
-
-
V
-
-
V
-
-
V
-
-0.1
μA
-
-0.1
μA
-
-0.5
V
-
560
140
-
MHz
4.0
5.0
pF
Test Conditions
IC=-50μA, IE=0
IC=-1μA, IB=0
IE=-50μA, IC=0
VCB=-60V, IE=0
VEB= -6V, IC=0
IC=-50mA, IB=-5mA
VCE=-6V,IC=-1mA
VCE=-12V, IE=-2mA, f=30MHz
VCB=-12V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. C
Any changes of specification will not be informed individually.
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