2SA1037AK Datasheet, PDF (1/2 Pages) Rohm – General Purpose Transistor

Elektronische Bauelemente
2SA1037AK
PNP Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
A
L
S
3
Top View
B
2
1
SC-59
Dim Min Max
A
2.70 3.10
B
1.30 1.70
C
1.00 1.30
n _{RoHS Compliant Product.}
n _{Excellent hFE linearity.}
n _{Complments the 2SC2412K.}
MARKING : FP, FQ, FR
*
D
G
C
J
H
K
COLLECTOR
BASE
EMITTER
D
0.35 0.50
G
1.70 2.30
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
1.25 1.65
S
2.25 3.00
All Dimension in mm
MAXIMUM RATINGS* T_{A=25 C}^O _{unless otherwise noted}
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
-50
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current -Continuous
-150
mA
P_C
Collector Dissipation
200
mW
T_J, T_stg
Junction and Storage Temperature
-55~150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V_(BR)CBO Ic=-50µA, I_E=0
V_(BR)CEO Ic=-1uA,I_B=0
V_(BR)EBO I_E=-50µA, I_C=0
I_CBO
V_CB=-60V,I_E=0
I_EBO
V_EB=-6V,I_C=0
h_FE
V_CE=-6V,I_C=-1mA
V_CE(sat) I_C=-50mA,I_B=-5mA
f_T
V_CE=-12V,I_C=-2mA,f=30MHz
C_ob
V_CB=-12V,I_E=0,f=1MHz
-60
V
-50
V
-6
V
-0.1
µA
-0.1 µA
120
560
-0.5
V
140
MHz
4
5
pF
CLASSIFICATION OF h_FE
Rank
P
Q
R
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
120 - 270
180 - 390
270 - 560
Any changing of specification will not be informed individual
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