2SA1036_10 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon General Purpose Transistor

Elektronische Bauelemente
2SA1036
-0.5A, -40V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
I_C Max.= -500 mA
Low V_CE(sat). Ideal for low-voltage operation.
CLASSIFICATION OF h_FE
Product-Rank 2SA1036-P
Range
82~180
Marking
HP
2SA1036-Q
120~270
HQ
2SA1036-R
180~390
HR
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
LeaderSize
7’ inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction & Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
-40
-32
-5
-500
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ. Max. Unit
Collector-base breakdown voltage
V(BR)CBO
-40
Collector-emitter breakdown voltage
V(BR)CEO
-32
Emitter-base breakdown voltage
V(BR)EBO
-5
Collector cut-off current
ICBO
-
Emitter cut-off current
IEBO
-
Collector-emitter saturation voltage
VCE(sat)
-
DC current gain
hFE
82
Transition frequency
fT
-
Collector output capacitance
COB
-
-
-
V
-
-
V
-
-
V
-
-1
μA
-
-1
μA
-
-0.4
V
-
390
200
-
MHz
7
-
pF
Test Conditions
IC=-100μA, IE=0
IC=-1mA, IB=0
IE=-100μA, IC=0
VCB=-20V, IE=0
VEB= -4V, IC=0
IC=-100mA, IB=-10mA
VCE=-3V, IC=-10mA
VCE=-5V, IC=-20mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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