2SA1036K Datasheet, PDF (1/2 Pages) Rohm – Medium Power Transistor

Elektronische Bauelemente
2SA1036K
PNP Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
A
L
3
S
Top View
B
2
1
SC-59
Dim Min Max
A
2.70 3.10
B
1.30 1.70
C
1.00 1.30
n _{RoHS Compliant Product}
n _{Large IC. ICMax.= -500 mA}
n _{Low VCE(sat). Ideal for low-voltage operation.}
D
G
C
J
H
K
MARKING : HP, HQ, HR
*
COLLECTOR
BASE
EMITTER
MAXIMUM RATINGS* T_{A=25 C}^O _{unless otherwise noted}
D
0.35 0.50
G
1.70 2.30
H
0.00 0.10
J
0.10 0.26
K
0.20 0.60
L
1.25 1.65
S
2.25 3.00
All Dimension in mm
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-40
V
V_CEO
Collector-Emitter Voltage
-32
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-500
mA
P_C
Collector Dissipation
200
mW
T_J, T_stg
Junction and Storage Temperature
-55~150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V_(BR)CBO Ic=-100µA,I_E=0
-40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V_(BR)CEO Ic=-1mA,I_B=0
V_(BR)EBO I_E=-100µA,I_C=0
I_CBO
V_CB=-20V,I_E=0
-32
V
-5
V
-1
µA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
V_EB=-4V,I_C=0
h_FE
V_CE=-3V,I_C=-10mA
V_CE(sat) I_C=-100mA,I_B=-10mA
-1
µA
82
390
-0.4
V
Transition frequency
Collector output capacitance
f_T
V_CE=-5V,I_C=-20mA,f=100MHz
C_ob
V_CB=-10V,I_E=0,f=1MHz
200
MHz
7
pF
CLASSIFICATION OF h_FE
Rank
P
Q
R
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
82 - 180
120 - 270
180 - 390
Any changing of specification will not be informed individual
Page 1 of 2