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2SA1020_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
2SA1020
-2A, -50V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 Power amplifier applications
G
CLASSIFICATION OF hFE(1)
M
Product-Rank
Range
2SA1020-O
70-140
2SA1020-Y
120-240
TO-92MOD
N
H
 Emitter
 Collector
 Base
L
J
A
D
B
Collector

K
E
F
C

Base

Emitter
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.50 6.50
8.00 9.00
12.70 14.50
4.50 5.30
0.35 0.65
0.30 0.51
1.50 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.70 2.05
2.70 3.20
0.85 1.15
1.60 Max
0.00 0.40
4.00 Min
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-50
-50
-5
-2
900
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Storage Time
Fall Time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Ton
Ts
Tf
-50
-
-
-50
-
-
-5
-
-
-
-
-1
-
-
-1
70
-
240
40
-
-
-
-
-0.5
-
-
-1.2
-
100
-
-
40
-
-
0.1
-
-
1
-
-
0.1
-
Unit
Test Conditions
V
V
V
μA
μA
V
V
MHz
pF
μs
IC= -100μA, IE = 0A
IC= -10mA, IB = 0A
IE= -100μA, IC = 0A
VCB= -50 V, IE = 0 A
VEB= -5 V, IC = 0 A
VCE= -2V, IC= -0.5A
VCE= -2V, IC= -1.5A
IC= -1A, IB= -50mA
IC= -1A, IB= -50mA
VCE = -2V, IC = -500mA
VCB = -10V, IE = 0 A, f=1MHz
VCC= -30V
IB1= -IB2= -0.05A
IC= -1A
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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