2SA1020 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Elektronische Bauelemente
2SA1020
PNP Transistor
Plastic-Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92 MOD
6.0±0.2
4 . 9 ±0. 2
FEATURE
Power Amplifier Applications
1.0±0.1
MAXIMUM RATINGS Ta=25^oC unless otherwise noted
Symbol Parameter
Value
Units
V_CBO
Collector-Base Voltage
-50
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-50
V
-5
V
-2
A
PD
Total Power Dissipation
900
mW
TJ,Tstg Junction and ^{Storage Temperature} -55~+150
C^O
0.
50
+0 . 1
–0.1
0 . 4 5 ^+– _00..1¹
(1.50 Typ.)
123
1.
9
+0.1
–0.1
3.0±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Satruation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
fT
Cob
Min
-50
-50
-5
-
-
-
-
70
-
-
unless otherwise specified
Typ.
-
-
-
-
-
Max Unit Test Conditions
-
V IC=-100µA,IE=0
-
V IC=-1mA,IB=0
-
V IE=-100µA,IC=0
-1
uA VCB=-50V,IE=0
-1
uA VBE=-5 V,IC=0
-
-0.5
V IC=- 1A,IB=-50mA
-
-1.2
V IC=- 1 A,IB=- 50mA
-
240
VCE=-2 V, IC=-500A
100
-
MHz VCE=-2 V, IC=- 500mA
40
-
pF VCB=-10 _V, f=1MHz
Classification of hFE1
Rank
Range
O
70~140
Y
120~240
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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