2SA1013 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (COLOR TV VERT. DEFELCTION OUTPUT APPLICATIONS)

Elektronische Bauelemente
2SA1013
-1A, -160V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURE
High Voltage：V_CEO= -160V
Large Continuous Collector Current Capability
Complementary to 2SC2383
CLASSIFICATION OF h_FE
Product-Rank 2SA1013-R
Range
60~120
2SA1013-O
100~200
2SA1013-Y
160~320
TO-92L
G
H
J
1Emitter
2Collector
3Base
A
D
B
K
E
CF
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.70 5.10
7.80 8.20
13.80 14.20
3.70 4.10
0.35 0.55
0.35 0.45
1.27 TYP.
1.28 1.58
2.44 2.64
0.60 0.80
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-160
-160
-6
-1
0.9
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
-160
-
-
V
V(BR)CEO
-160
-
-
V
V(BR)EBO
-6
-
-
V
ICBO
-
-
-1
µA
IEBO
-
-
-1
µA
hFE
60
-
320
VCE(sat)
-
-
-1.5
V
VBE
-
-
-0.75
V
fT
15
-
-
MHz
COb
-
-
35
pF
Test Conditions
IC = -100µA, IE = 0
IC = -1mA, IB = 0
IE = -10µA, IC = 0
VCB = -150V, IE = 0
VEB = -6V, IC = 0
VCE = -5V, IC = -200mA
IC = -500mA, IB = -50mA
VCE = -5V, IC = -5mA
VCE = -5V, IC = -200mA
VCB = -10V, IE = 0, f = 1 MHz
http://www.SeCoSGmbH.com/
31-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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