2N7002W Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Elektronische Bauelemente
2N7002W
115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
N–Channel SOT–323
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
VDSS
VDGR
ID
ID
IDM
60
60
±ā115
±ā75
±ā800
Vdc
Vdc
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
VGS
±ā20
Vdc
VGSM
±ā40
Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
R_θJA
PD
556 °C/W
300
mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_θJA
TJ, Tstg
417
–ā55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
http://www.SeCoSGmbH.com
01-Jun-2005 Rev. A
A
L
3
BS
1
2
V
G
C
D
H
N–Channel
3
1
2
2
SOT–323
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1
2
Gate
Source
K72 , 702 = Device Code
K
J
Any changing of specification will not be informed individual
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