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| 2N7002T_10 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement MOSFET | |||
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Elektronische Bauelemente
2N7002T
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
SOT-523
FEATURES
ï¬ High density cell design for low RDS(ON).
ï¬ Voltage controlled small signal switch.
ï¬ Rugged and reliable.
ï¬ High saturation current capability.
DEVICE MARKINGï¼K72
ïªï
Gate
ï«ï
Drain
ï¬ï
Source
REF.
A
B
C
D
G
J
Millimeter
Min. Max.
1.50 1.70
0.75 0.95
0.60 0.80
0.23 0.33
0.50BSC
0.10 0.20
REF.
K
M
N
S
Millimeter
Min. Max.
0.30
---
---
011.005oo0
1.50 1.70
MAXIMUM RATINGS (TA=25â unless otherwise specified)
PARAMETER
Drain-Source Voltage
Drain Current
Power Dissipation
Operating Junction Temperature Range
Operating Storage Temperature Range
SYMBOL
VDS
ID
PD
TJ
TSTG
RATING
60
115
150
150
-55~150
UNIT
V
mA
mW
°C
°C
http://www.SeCoSGmbH.com/
10-Jun-2010 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3
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