2N7002KDW_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual N-Channel Small Signal MOSFET

Elektronische Bauelemente
2N7002KDW
115mA, 60V
Dual N-Channel Small Signal MOSFET
FEATURES
 Low on-resistance
 Fast switching Speed
 Low-voltage drive
 Easily designed drive circuits
 ESD protected:2000V
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
MECHANICAL DATA
 Case: SOT-363
 Case Material-UL flammability rating 94V-0
 Terminals: Solderable per MIL-STD-202,
Method 208
 Weight: 0.006 grams(approx.)
DEVICE MARKING: RK
6
5
4
D₂
G₁
S₁
S₂
G₂
D₁
1
2
3
SOT-363
A
E
6
5
4^L
B
F¹
2
3
C
H
DG
K
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Power Dissipation
Operating Junction & Storage Temperature Range
V_DS
V_GS
I_D
I_DP1
I_D
I_DRP1
P_D
T_J, T_STG
Note:
1. Pw≦10μS, Duty cycle≦1%
2. When mounted on a 1x0.75x0.062 inch glass epoxy board
RATING
60
±20
115
800
115
800
225
-55~150
UNIT
V
V
mA
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITION
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V_(BR)DSS
I_DSS
I_GSS
OFF CHARACTERISTICS
60
-
-
-
-
1.0
-
-
±10
V
V_GS=0V, I_D =10μA
μA V_DS=60V, V_GS=0V
μA V_DS=0V , V_GS=±20V
Gate-Threshold Voltage
Static Drain-Source On Resistance
Forward Transfer Admittance
V_GS(TH)
R_DS(ON)
g_FS*
ON CHARACTERISTICS
1
1.85
2.5
-
-
7.5
-
-
7.5
80
-
-
V
V_DS= V_GS, I_D =250μA
Ω
V_GS=10V, I_D=0.5A
V_GS=5V, I_D=0.05A
ms V_DS=10V, I_D=0.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-off Delay Time
* Pw≦300μS, Duty cycle≦1%
http://www.SeCoSGmbH.com/
DYNAMIC CHARACTERISTICS
C_ISS
C_OSS
C_RSS
-
25
50
-
10
25
-
3.0
5
SWITCHING CHARACTERISTICS
T_d(ON)
-
12
20
T_d(OFF)
-
20
30
V_DS=25V
pF V_GS=0V
f=1MHz
nS
V_DD=30V, I _D=0.2A
R_L=150Ω, V _Gs=10V, R_G=10Ω
Any changes of specification will not be informed individually.
31-Dec-2009 Rev. A
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