2N7002K Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

Elektronische Bauelemente
2N7002K
0.3A , 60V , R_DS(ON) 4 
N-Ch Small Signal MOSFET with ESD Protection
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 R_DS(ON), V_GS@10V, I_DS@500mA=3
 R_DS(ON), V_GS@4.5V, I_DS@200mA=4
 Advanced Trench Process Technology
 High Density Cell Design For Ultra Low On-Resistance
 Very Low Leakage Current In Off Condition
 Specially Designed for Battery Operated Systems,
Solid-State Relays Drivers：Relays, Displays, Lamps,
Solenoids, Memories, etc.
 ESD Protected 2KV HBM
 In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
 Case: SOT-23 Package
 Terminals: Solderable per MIL-STD-750,
Method 2026
 Approx. Weight: 0.008 gram
MARKING
K72
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Drain

PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7’ inch

Gate

Source
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹
I_DM
Maximum Power Dissipation
T_A=25°C
T_A=75°C
Thermal Resistance Junction-Ambient (PCB mounted) ²
Operating Junction and Storage Temperature
Notes:
1. Maximum DC current limited by the package.
2. Surface mounted on FR4 board, t < 5sec.
P_D
R_JA
T_J, T_STG
Rating
60
±20
300
2000
0.35
0.21
357
-55 ~ +150
Unit
V
V
mA
mA
W
°C/W
°C
http://www.SeCoSGmbH.com/
30-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
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