2N7002DW Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Elektronische Bauelemente
2N7002DW
115 mAMPS, 60VOLTS, RDS(on)=7.5 W
Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–363
MAXIMUM R ATING S
R ating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
S ymbol Value Unit
VDSS
60
Vdc
VDGR
60
Vdc
VGS
± 20
Vdc
THE R MAL C HAR AC TE R IS TIC S
C harac teris tic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
S ymbol
PD
R_θJA
TJ, Tstg
Max
Unit
150
mW
1.8 mW/°C
625
– 55 ~
+150
°C/W
°C
SOT-363
.055(1.40)
.047(1.20)
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
D₂
G₁
S₁
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ^≦ 300 µs, Duty Cycle ^≦ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
S₂
G₂
D₁
MAR K ING DIAG R AM
Κ72
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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