2N7002 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Elektronische Bauelemente
2N7002
115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET
RoHS Compliant Product
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
VDSS
VDGR
ID
ID
IDM
60
60
±ā115
±ā75
±ā800
Vdc
Vdc
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
VGS
±ā20
Vdc
VGSM
±ā40
Vpk
Characteristic
Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
PD
225
mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
R_θJA
PD
556 °C/W
300
mW
mW/°C
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_θJA
TJ, Tstg
417
–ā55 to
+150
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
N–Channel
3
1
2
2
SOT–23
CASE 318
STYLE 21
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
0_− 2_− 5D
1
2
Gate
Source
02 = Device Code 7002
5 = Year 2005
D = Weeks A~z
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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