2N7000_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – N-Channel Enhancement Mode Power Mos.FET

Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high
speed applications such as switching regulators,
converters, solenoid and relay drives.
D
b1
SEATING
PLANE
TO-92
E
S1
Drain
Gate
Source
C
e1 b
e
REF.
A
S1
b
b1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
-Continuous
Drain Current
Power Dissipation
-Non-Repetitive (tp 50us)
-Continuous
-Pulsed
- TA=25^oC
-Derate Above 25^oC
Thermal Resistance, Junction-To-Ambient
Operating Junction and Storage Temperature Range
Max. Lead Temperature For Soldering Purposes,
1/16" From Case For 10 Seconds
Symbol
VDS
VGS
VGSM
ID
IDM
PD
RθJA
Tj, Tstg
TL
Ratings
60
±20
±40
200
500
0.35
2.8
357
-55~+150
300
Unit
V
V
V
mA
mA
W
mW/ ^oC
o_C/W
o_C
o_C
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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